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Daily Program

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Monday 08/04 Tuesday 09/04 Wednesday 10/04 Thursday 11/04


07:45 Registration
08:30 Opening Session SiliconPV
08:30
Welcome to SiliconPV
Jef Poortmans, imec
08:45 Keynote
08:45
Upscaling 2-Terminal Perovskite-Silicon Tandems: Adaptation of Industrial Technologies Towards Commercialization
Brett Kamino, CSEM
09:15 Session 1: Different Flavors of Tandem Cell Architectures
Chair: Stefan Glunz (Fraunhofer ISE) & Pierre Verlinden (Amrock)
09:15
27% Efficient 4-T Tandem with Highly Transparent Perovskite Top Cell and Back-Contacted Si Heterojunction Bottom Cell
Dong Zhang, ECN part of TNO - Solliance
09:30
Fully Textured Perovskite/Silicon Monolithic Tandem and Triple-Junction Solar Cells
Fan Fu, EPFL
09:45
Monolithic CZTS-on-Silicon Tandem Solar Cells: Prospects and Challenges
Alireza Hajijafarassar, Technical University of Denmark (DTU)
10:00 Coffee Break
10:30 Session 2: Advanced Analysis for Material Defects and Metal Impurities in Si
Chair: Ron Sinton (Sinton Instruments) & Ferenc Korsós (Semilab Co. Ltd.)
10:30
Accounting for Coil Sensitivity Dependence on Sample Thickness in High-Accuracy Inductively Coupled Photoconductance Measurements
Lachlan Black, The Australian National University
10:45
Lifetime Spectroscopy with High Spatial Resolution Based on Temperature- and Injection Dependent PL Imaging
Halvard Haug, Institute for Energy Technology (IFE)
11:00
Comparison of Magnetic Field Imaging (MFI) and Magnetic Field Simulations of Silicon Solar Cells
Dominik Lausch, DENKweit GmbH
11:15
A Study of Metal Contamination on n-Type Silicon Cell Material
Joachim John, imec
11:30
Transition Metal - Hydrogen Reactions in Silicon - The Role of Optical Excitation
Anthony Peaker, University of Manchester
11:45
New Insights Into the Thermally Activated Defects in n-Type Float-Zone Silicon
Yan Zhu, University of New South Wales (UNSW)
12:00 Lunch Break
13:00 Poster Session 1: Novel Characterization and Modelling
Chair: Andreas Schütt (CELLOscan) & Dominic Walter (ISFH)
(blue session)
S1-02
Impact of Excess Carrier Profiles in the Luminescent Emission and Detection of Silicon Solar Cells
Nekane Azkona, Institute of Microelectronic Technology - University of the Basque Country (UPV/EHU)
S1-03
New Characterization Method for Determination of Surface Recombination Rate of Carrier Selective Junctions
Andrej Čampa, University of Ljubljana
S1-04
A Novel Approach for the Evaluation of a Phosphorus Diffusion Design of Experiment
Gerd Fischer, Hochschule Zittau/Görlitz
S1-05
GD-OES Depth Profiling and Calibration of B Doped Dielectric Layers
Fabian Geml, University of Konstanz
S1-06
Enhanced Series Resistance of a-Si:H/c-Si Heterojunction (SHJ) Solar Cells Under Illumination
Moustafa Ghannam, Kuwait University
S1-07
Investigating the Effect of the Perovskite Absorber Material Thickness on the Performance of 4-Terminal Mechanically-Stacked Perovskite/Silicon Tandem Solar Cell
Ali Hajjiah, Kuwait University
S1-08
Electrical and Optical Analysis of a Spray Coated Transparent Conductive Adhesive for Two-Terminal Silicon Based Tandem Solar Cells
Ulrike Heitmann, Fraunhofer Institute for Solar Energy Systems ISE
S1-09
Fundamental Errors Using Calibrated Photoluminescence Imaging for Extracting Dark Saturation Current Densities
David Herrmann, Fraunhofer Institute for Solar Energy Systems ISE
S1-10
Effect of Hydrogen on Bulk Properties of Sputtered ITO
Nimish Juneja, Fraunhofer Institute for Solar Energy Systems ISE
S1-11
Effect of a-Si:H and µc-Si:H Junction on Hydrogen Transport During Plasma Exposure
Fatiha Kail, LPCMME, University Oran1
S1-12
Powerful Topographic Analysis Method Using Fast Fourier Transformation for c-Si Solar Cells and Emerging Technologies
Karolien Saliou, IPVF
S1-13
Interface Engineering of Ultra-Thin AlOx/ PEDOT:PSS Carrier Selective Contacts for Low-Cost, High-Efficiency Si-Solar Cells
Gurleen Kaur, National University of Singapore
S1-14
Accurate Contact and Contactless Methods for Emitter Sheet Resistance Testing of PV Wafers
Ferenc Korsós, Semilab Co. Ltd.
S1-15
A High-Accuracy Calibration Method for Temperature Dependent Photoluminescence Imaging
Sissel Tind Kristensen, University of Agder
S1-16
Effect of Amorphous Silicon Film Thickness on Heterojunction Band Alignment
Martin Ledinsky, Institute of Physics, Czech Academy of Sciences
S1-17
Investigation of Injected Charge by Using Novel Plasma Charging System for Field-Effect Passivation on Boron-Doped Silicon Surface
Kwan Hong Min, Korea University
S1-18
Numerical Simulation of an Ozone-Based Wet-Chemical Etching
Lena Mohr, Fraunhofer Institute for Solar Energy Systems ISE
S1-19
Study of Anomalous S-Shape Behaviour in Current Density-Voltage Characteristics of Carrier Selective Contact Molybdenum Oxide and Amorphous Silicon Based Heterojunction Silicon Solar Cells
Sapna Mudgal, Indian Institute of Technology Delhi
S1-20
On the Different Explanations of the Recombination Currents with High Ideality Factor in Silicon Solar Cells
Aloña Otaegi, Institute of Microelectronic Technology / University of the Basque Country (UPV/EHU)
S1-21
Understanding the Effect of Hetero-Interfaces Transport on Contact Resistance for c-Si Carrier Selective Contacts
Paul Procel, TU Delft
S1-22
Bottom Cell Light Management Strategies for Mechanically Stacked Perovskite/c-Si Tandem Devices
Arsalan Razzaq, KU Leuven / imec
S1-23
Evaluation of Localized Vertical Current Formation in Carrier Selective Passivation Layers of Silicon Solar Cells by TEM and Conductive AFM
Susanne Richter, Fraunhofer Center for Silicon Photovoltaics CSP
S1-24
Characterization of Atomic Layer Deposition Alumina Thin Films on Black Silicon Textures Using Helium Ion Microscopy
Tudor Emilian Scheul, University of Southampton
S1-25
Light Trapping Analysis by IR Thermal Imaging of Partial Transparent Bifacial Solar Cell
Suhaila Sepeai, Solar Energy Research Institute (SERI)
S1-26
Characterization of Sputtered A-Si:H Passivated Silicon Surface by Temperature- and Injection-Dependent Lifetime Spectroscopy
Krishna Singh, Indian Institute of Technology Delhi
S1-27
Injection Dependent Spatially Resolved Lifetime Mapping Using Photoluminescence
Daniel Skorka, University of Konstanz
S1-28
Demonstrating a Web-Based PV Simulation Platform(Targeting at Machine Learning & Advanced Device and Process Simulation to Support Process Optimization)
Rolf Stangl, Solar Research Institute of Singapore (SERIS)
S1-29
Edge Recombination Analysis of Silicon Solar Cells Using Photoluminescence Measurements
Hannah Stolzenburg, Fraunhofer Institute for Solar Energy Systems ISE
S1-30
Excess Charge Carrier Injection Densities in PERC Solar Cells at Open-Circuit Voltage and Maximum Power Point
Maksym Tratnikov, TU Bergakademie Freiberg / Institute of Applied Physics
S1-31
Low-Temperature Silicon Surface Passivation for Bulk Lifetime Studies Based on Corona-Charged Al2O3
Boris Veith-Wolf, Institute for Solar Energy Research in Hamelin (ISFH)
S1-32
Three-Terminal Perovskite Silicon Tandem Solar Cells with Top and Interdigitated Rear Contacts
Philipp Wagner, Helmholtz-Zentrum Berlin, Institute of Silicon Photovoltaics
S1-33
Averaging the Unaverageable: Defining a Meaningful Local Series Resistance for Large-Area Silicon Solar Cells
Jan-Martin Wagner, University of Kiel
S1-34
A Simple Method with Analytical Model to Extract Heterojunction Solar Cell Series Resistance Components and to Predict the A-Si:H(i/p) Contact Resistivity
Er-Chien Wang, Helmholtz-Zentrum Berlin, PVcomB
S1-35
Simulation of Solar Cell Performance Based on in the Field Measured Ambience Parameters
Gustav Wetzel, Leibniz Universität Hannover
S1-36
The Numerical Analysis of ZnO Nanoparticle Based Down-Converting Layer's Influence on Solar Cell Efficiency
Katarzyna Znajdek, Lodz University of Technology
14:00 Keynote
14:00
Annealing Prior to Contact Firing: A Potential New Approach to Suppress LeTID
Chandany Sen, University of New South Wales (UNSW)
14:30 Session 3: Growing Insights in Light- and Temperature Induced Degradation Mechanisms
Chair: Giso Hahn (University of Konstanz) & Brett Hallam (University of New South Wales)
14:30
Impact of SiN_x:H Material Properties on Light and Elevated Temperature Induced Degradation (LeTID) in Mc-Si
Dennis Bredemeier, Institute for Solar Energy Research in Hamelin (ISFH)
14:45
Excessive Light-Induced Degradation in Boron-Doped Cz Silicon PERC Triggered by Dark Annealing
Fabian Fertig, Hanwha Q CELLS GmbH
15:00
Controlling Light- and Elevated Temperature-Induced Degradation by Thin Film Barrier Layers
Utkarshaa Varshney, University of New South Wales (UNSW)
15:15
Absence of Light and Elevated Temperature Induced Degradation (LeTID) of the Carrier Lifetime in Boron-Doped Cz-Silicon
Michael Winter, Institute for Solar Energy Research in Hamelin (ISFH)
15:30 Coffee Break
16:00 Poster Session 2: Improvements on Carrier Selective Contacts
Chair: Franz-Josef Haug (EPFL)
(white Session)
S2-01
Investigation of the Oxygen Content Effect on the Optoelectronic Properties of the Indium-Tin-Oxide Based Transparent Electrodes for Silicon Heterojunction Solar Cells
Brahim Aïssa, Qatar Environment and Energy Research Institute QEERI
S2-02
Lifetime Drop Upon Electrode Deposition in Passivating Contacts Solar Cells: The Role of Localized High-Recombination Areas
Jean Cattin, EPFL
S2-03
Improved Passivation for SHJ Utilizing Dual Intrinsic a-Si:H Layers
Lara Bodlak, Fraunhofer Institute for Solar Energy Systems ISE
S2-04
Screen Printed Ag Contacts for n-Type Poly Silicon Passivated Contacts
Aditya Chaudhary, International Solar Energy Research Center (ISC) Konstanz
S2-05
ALD-Grown Magnesium Oxide as a Material for Silicon Heterojunction Solar Cells
Ganna Chistiakova, Helmholtz Zentrum Berlin
S2-06
MoOx Integration with Printed Ag for Silicon Heterojunction Solar Cells and its Long-Term Stability at Module Level
Jinyoun Cho, KU Leuven / imec / U Hasselt / EnergyVille
S2-07
E-Beam Evaporated p-Poly-SiSiOx Layers for Passivated Contact Silicon Photovoltaic Applications
Emine Hande Ciftpinar, METU-GUNAM (Center for Solar Energy Energy and Applications)
S2-08
p-Type Silicon Front Emitters for Si Heterojunction Solar Cells
Marco Della Noce, ENEA - Portici Research Center
S2-09
Integration Avenues in Solar Cells Implementing Passivating Contacts
Juan J Diaz Leon, CSEM
S2-10
Characterization of Absorption Losses in Rear Side n-Type Polycrystalline Silicon Passivating Contacts
Meriç Fırat, KU Leuven / imec
S2-11
Carrier Selective Contacts Based on Low Pressure Chemical Vapor Deposition on Planar and Black Silicon
Alireza Hajijafarassar, Technical University of Denmark (DTU)
S2-12
Comparison of nc-Si:H and a-Si:H as Hole Selective Contact Layers in Silicon Heterojunction Solar Cells
Jan Haschke, EPFL, PV-Lab
S2-13
Sputtering of Silicon Thin Films for Passivated Contacts
Jan Hoß, International Solar Energy Research Center (ISC) Konstanz
S2-14
Silicon Films for Heterojunction Solar Cells by Hot-Wire CVD
Madeleine Justianto, Fraunhofer-Institute for Surface Engineering and Thin Films IST
S2-15
High Efficient Rear Emitter HIT Solar Cell Using Low Temperature Growth of p-Type Nano-Crystalline Silicon Oxide Layer
Sangho Kim, Sungkyunkwan University
S2-16
Transparent Passivated Contact Optimization for Silicon Heterojunction Solar Cells
Malte Köhler, Forschungszentrum Jülich GmbH
S2-17
Disorder of Hydrogenated Amorphous Silicon Passivation Layer and its Influence on Silicon Heterojunction Solar Cell
Sunhwa Lee, Sungkyunkwan University
S2-18
Carrier Selective Passivated Contact Using Hot-Wire CVD
Shenghao Li, IEK-5, Research Center Jülich
S2-19
Comparison of Low Damage Sputter Deposition Techniques to Enable the Application of Very Thin a-Si Passivation Films
Volker Linss, VON ARDENNE GmbH
S2-20
Hydrogen Passivation Effect on p-Type Poly-Si / SiOx Stack for Crystalline Silicon Solar Cells
Mickael Lozac'h, AIST - National Institute of Advanced Industrial Science and Technology
S2-21
UV/O3 as a Versatile Approach for Highly-Passivating Oxides: Application to ALD ZnO/Al2O3 Stacks
Bart Macco, Eindhoven University of Technology
S2-22
Insights into Charge Carrier Transport Mechanisms of SiO2/Poly-SiCx/TCO Contact Structures for Silicon Solar Cells
Luana Mazzarella, TU Delft PVMD
S2-23
SiOxNy:B Layers for Ex-Situ Doping of Hole-Selective Poly-Silicon Contacts: A Passivation Study
Audrey Morisset, CEA-INES / IPVF
S2-24
Industrial Scale p-Type c-Si Solar Cells Featuring Hole-Selective Moox Rear Contact with Efficiencies Above 17.6%
Hisham Nasser, The Center for Solar Energy Research and Applications (GUNAM)
S2-25
Electrical Characterization and Defect States Analysis of Ag/ITO/MoOx/n-Si/LiFx/Al Carrier Selective Contact Solar Cells
Mrutyunjay Nayak, Indian Institute of Technology Delhi
S2-26
Inline Deposited PassDop Layers for Rear Side Passivation and Contacting of p-c-Si PERL Solar Cells with High Bifaciality
Mohammad Hassan Norouzi, Fraunhofer Institute for Solar Energy Systems ISE
S2-27
Enhanced Field-Effect Passivation Using Nano-Scaled Pyramids for Light Management in Diffused Junction Silicon Solar Cells
Arsalan Razzaq, KU Leuven / imec
S2-28
Improved Temperature Coefficients in Very Thin Silicon Heterojunction Solar Cells
Hitoshi Sai, AIST - National Institute of Advanced Industrial Science and Technology
S2-29
Optical Properties of Poly-SiOx Carrier-Selective Passivating Contacts
Manvika Singh, Delft University of Technology
S2-30
Different Flavors of Contact Passivation (Investigating SiOx/n-poly-Si, SiOx/p-poly-Si and AlOx/p-poly-Si Tunnel Layer Passivated Contacts for Rear- & Front-Side Device Integration)
Rolf Stangl, Solar Research Institute of Singapore (SERIS)
S2-31
Compensation of the Sputter Damage During a-Si Deposition for poly-Si/SiOx Passivating Contacts by Ex-Situ P-Doping
Jonathan Steffens, University of Konstanz
S2-32
Review and Outlook of Doped and Undoped LPCVD PolySi Based Passivating Contacts for Industrial Si Solar Cells
Maciej K. Stodolny, ECN part of TNO - Solar Energy
S2-33
Ex Situ Phosphorus Doped Polysilicon Films by Plasma Immersion Ion Implantation (PIII): Controlling and Simplifying Passivated Contacts Integration
Antoine Veau, CEA-INES
S2-34
Tunnel Oxide Passivation and Polysilicon Contact on p-Type c-Si Wafers and High Efficiency Solar Cells
Baojie Yan, Ningbo Institute of Materials Technologies and Engineering
S2-35
Opto-Electrical Optimization of nc-SiOx:H Layers for Silicon Heterojunction Solar Cells
Yifeng Zhao, Delft University of Technology
17:00 Session 4: Progress in Process Step Development
Chair: Joachim John (imec) & Fabian Fertig (Hanwha Q CELLS GmbH)
17:00
Improving Wall Slip Behavior on Screen Emulsions for Fine Line Screen Printing
Sebastian Tepner, Fraunhofer Institute for Solar Energy Systems ISE
17:15
Inkjet-Printing of Phosphorus- and Boron-Doped Liquid Silicon Ink for Interdigitated Back Contact Solar Cells
Nadine Wehmeier, Institute for Solar Energy Research in Hamelin (ISFH)
17:30
Shallow Phosphorus Junctions by Plasma-Immersion Ion Implantation and Rapid Thermal Processing
Pierre Bellanger, CEA-INES
17:45
Establishment of the Native Oxide Barrier Layer for Selective Electroplated Metallization for Bifacial Silicon Heterojunction Solar Cells
Thibaud Hatt, Fraunhofer Institute for Solar Energy Systems ISE
18:00
Impact of the Thermal Budget of the Emitter Formation on the pFF of PERC+ Solar Cells
Philip Jäger, Institute for Solar Energy Research in Hamelin (ISFH)
18:15
Potential Induced Degradation of Bifacial PERC Solar Cells - Root Cause Analysis at the Rear Side Passivation Layer
Kai Sporleder, Fraunhofer Center for Silicon Photovoltaics CSP
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